Attributes

Key Value
Base Product NumberNVD5414
CategoryDiscrete Semiconductor .
Current - Continuous Dr.24A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .48 nC @ 10 V
Input Capacitance (Ciss.1200 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)55W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs37mOhm @ 24A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageDPAK-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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