Attributes

Key Value
Base Product NumberNVHL080
CategoryDiscrete Semiconductor .
Current - Continuous Dr.31A (Tc)
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .20V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .56 nC @ 20 V
Input Capacitance (Ciss.1670 pF @ 800 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)178W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs110mOhm @ 20A, 20V
SeriesAutomotive, AEC-Q101
Supplier Device PackageTO-247-3
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+25, -15V
Vgs(th) (Max) @ Id4.3V @ 5mA
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