Attributes

Key Value
Base Product NumberNVMYS012
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11.6A (Ta), 52A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .19 nC @ 10 V
Input Capacitance (Ciss.1338 pF @ 50 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-1023, 4-LFPAK
Power Dissipation (Max)3.6W (Ta), 72W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs12.2mOhm @ 14A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageLFPAK4 (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 77?A
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