Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .96 nC @ 10 V
Input Capacitance (Ciss.5500 pF @ 10 V
MfrRenesas
Mounting TypeThrough Hole
Operating Temperature150?C
PackageBulk
Package / CaseTO-251-3 Short Leads, I.
Power Dissipation (Max)1W (Ta), 84W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs5.3mOhm @ 30A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 1mA
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