Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.5A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .13 nC @ 10 V
Input Capacitance (Ciss.600 pF @ 10 V
MfrRenesas
Mounting TypeSurface Mount
Operating Temperature150?C
PackageBulk
Package / CaseSOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max)1.05W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs60mOhm @ 3A, 10V
Series-
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 1mA
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