Renesas Electronics America HAT2173HWS-E

mpnHAT2173HWS-E
brandname: Renesas Electronics America
manufacturername: Renesas Electronics America

Attributes

Key	Value
Current - Continuous Dr.	25A (Ta)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	8V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	61 nC @ 10 V
Input Capacitance (Ciss.	4350 pF @ 10 V
Mfr	Renesas Electronics Ame.
Mounting Type	Surface Mount
Operating Temperature	150?C
Package / Case	SC-100, SOT-669
Part Status	Obsolete
Power Dissipation (Max)	30W (Tc)
Rds On (Max) @ Id, Vgs	15mOhm @ 12.5A, 10V
Series	-
Supplier Device Package	5-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	6V @ 20mA