Renesas Electronics America Inc HAT2173HWS-E

mpnHAT2173HWS-E
brandname: Renesas Electronics America Inc
manufacturername: Renesas Electronics America Inc

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	25A (Ta)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	8V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	61 nC @ 10 V
Input Capacitance (Ciss.	4350 pF @ 10 V
Mfr	Renesas Electronics Ame.
Mounting Type	Surface Mount
Operating Temperature	150?C
Package	Tape & Reel (TR)
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	30W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	15mOhm @ 12.5A, 10V
Series	-
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	6V @ 20mA