Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.80A (Tc)
Drain to Source Voltage.40 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .135 nC @ 10 V
Input Capacitance (Ciss.6900 pF @ 25 V
MfrRenesas Electronics Ame.
Mounting TypeThrough Hole
Operating Temperature175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)1.8W (Ta), 115W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.8mOhm @ 40A, 10V
Series-
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250?A
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