Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.65A (Ta)
Drain to Source Voltage.30V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .49nC @ 4.5V
Input Capacitance (Ciss.7.65pF @ 10V
MfrRenesas Electronics Ame.
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageBulk
Package / Case8-PowerWDFN
Part StatusObsolete
Power Dissipation (Max)65W (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 32.5A, 10V
Series-
Supplier Device Package8-WPAK
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-
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