Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Ta)
Drain to Source Voltage.30 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .9 nC @ 4.5 V
Input Capacitance (Ciss.1330 pF @ 10 V
MfrRenesas Electronics Ame.
Mounting TypeSurface Mount
Operating Temperature-
PackageBulk
Package / Case8-PowerWDFN
Part StatusObsolete
Power Dissipation (Max)28W (Tc)
Rds On (Max) @ Id, Vgs9.3mOhm @ 15A, 10V
Series-
Supplier Device Package8-WPAK
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-
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