Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Ta)
Drain to Source Voltage.75 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .140 nC @ 10 V
Input Capacitance (Ciss.10 pF @ 10 V
MfrRenesas Electronics Ame.
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)200W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.8mOhm @ 50A, 10V
Series-
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-
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