Attributes

Key Value
@Ic (A)2.0m
@VCE (test) (V)6.0
C(ob) (F)2.5p
CaseTO92
Collector Capacitance (.2.5 pF
Forward Current Transfe.180
hfe820=
Ic Max. (A)50m
ManufacturerRohm Semiconductor
Max. Operating Junction.150 ?C
Max. PD (W)300m
Maximum Collector Curre.0.05 A
Maximum Collector Power.0.2 W
Maximum Collector-Base .120 V
Maximum Collector-Emitt.120 V
Maximum Emitter-Base Vo.5 V
Pinout Equivalence Numb.3-10
PolarityNPN
SKU568573
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.140M
Transition Frequency (f.140 MHz
TypeTransistor Silicon NPN
Vbr CEO120
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