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Rohm Semiconductor R6006KNXC7G
manufacturer:

Attributes

Key Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C6A (Ta)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
MfrRohm Semiconductor
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusActive
Power Dissipation (Max)40W (Tc)
Rds On (Max) @ Id, Vgs830mOhm @ 3A, 10V
Series-
Supplier Device PackageTO-220FM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id5.5V @ 1mA