Attributes

Key Value
Base Product NumberR6015
CategoryDiscrete Semiconductor .
Current - Continuous Dr.15A (Tc)
Drain to Source Voltage.600 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .50 nC @ 10 V
Input Capacitance (Ciss.1700 pF @ 25 V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)100W (Tc)
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs300mOhm @ 7.5A, 10V
Series-
Supplier Device PackageLPTS
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 1mA
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