Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V, 15V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .27 nC @ 10 V
Input Capacitance (Ciss.1250 pF @ 100 V
MfrRohm Semiconductor
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)61W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs204mOhm @ 4A, 15V
Series-
Supplier Device PackageTO-220FM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id6.5V @ 600?A
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