Rohm Semiconductor R8002KND3TL1

mpnR8002KND3TL1
brandname: Rohm Semiconductor
manufacturername: Rohm Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	1.6A (Ta)
Drain to Source Voltage.	800 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	7.5 nC @ 10 V
Input Capacitance (Ciss.	140 pF @ 100 V
Mfr	Rohm Semiconductor
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Active
Power Dissipation (Max)	30W (Tc)
Rds On (Max) @ Id, Vgs	4.2Ohm @ 800mA, 10V
Series	-
Supplier Device Package	TO-252GE
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 150?A