Rohm Semiconductor RD3L03BATTL1

mpnRD3L03BATTL1
brandname: Rohm Semiconductor
manufacturername: Rohm Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	35A (Ta)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	37 nC @ 10 V
Input Capacitance (Ciss.	1930 pF @ 30 V
Mfr	Rohm Semiconductor
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Active
Power Dissipation (Max)	56W (Ta)
Rds On (Max) @ Id, Vgs	41mOhm @ 35A, 10V
Series	-
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 1mA