Attributes

Key Value
Base Product NumberRDN120
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Ta)
DescriptionMOSFET N-CH 250V 12A TO.
Detailed DescriptionN-Channel 250 V 12A (Ta.
Digi-Key Part NumberRDN120N25-ND
Drain to Source Voltage.250 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .62 nC @ 10 V
Input Capacitance (Ciss.1224 pF @ 10 V
ManufacturerRohm Semiconductor
Manufacturer Product Nu.RDN120N25
MfrRohm Semiconductor
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)40W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs210mOhm @ 6A, 10V
Series-
Supplier Device PackageTO-220FN
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 1mA
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev