Attributes

Key Value
Base Product NumberRQ7E100
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .53 nC @ 10 V
Input Capacitance (Ciss.2370 pF @ 15 V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Part StatusActive
Power Dissipation (Max)1.1W (Ta)
Rds On (Max) @ Id, Vgs11.2mOhm @ 10A, 10V
Series-
Supplier Device PackageTSMT8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 1mA
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