Attributes

Key Value
Base Product NumberRS1G
CategoryDiscrete Semiconductor .
Current - Continuous Dr.20A (Ta), 78A (Tc)
Drain to Source Voltage.40 V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .130 nC @ 10 V
Input Capacitance (Ciss.6890 pF @ 20 V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power Dissipation (Max)3W (Ta), 40W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs5.2mOhm @ 20A, 10V
Series-
Supplier Device Package8-HSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 1mA
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