Attributes

Key Value
@Ic (test) (A)400m
@VCE (V)10
CaseSOT78
Derate Above 25?C200m
Forward Current Transfe.40
Ic Max. (A)2.0
Icbo Max. @Vcb Max. (A)50u
ManufacturerSamsung
Max. hFE240
Max. Operating Junction.150 ?C
Max. PD (W)25
Maximum Collector Curre.2 A
Maximum Collector Power.25 W
Maximum Collector-Base .200 V
Maximum Collector-Emitt.150 V
Maximum Emitter-Base Vo.5 V
Min hFE40
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-15
PolarityNPN
SKU569321
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.5M
Transition Frequency (f.5 MHz
TypeTransistor Silicon NPN
Vbr CBO200
Vbr CEO150
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