Attributes

Key Value
@Ic (test) (A)1.0
@VCE (test)2.0
CaseSOT32
Derate Above 25?C80m
Forward Current Transfe.8000
Ic Max. (A)1.5
Icbo Max. @Vcb Max. (A)10u
ManufacturerSamsung
Mat.Silicon Logic
Max. hFE30k
Max. Operating Junction.150 ?C
Max. PD (W)10
Maximum Collector Curre.1.5 A
Maximum Collector Power.10 W
Maximum Collector-Base .150 V
Maximum Collector-Emitt.60 V
Maximum Emitter-Base Vo.8 V
Min hFE2k
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-10
PolarityNPN
SKU569324
Surface Mounted Yes/NoNO
t(f) Max. (S)1.0u-
t(on) Delay (S)500n-
t(stor) Max. (S)1.0u-
TypeTransistor Silicon NPN
Vbr CEO60
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