| @Ic (test) (A) | 5.0 |
| @VCE (V) | 5.0i |
| Case | TO3 |
| Collector Capacitance (Cc) | 600 pF |
| Derate Above 25?C | 800m |
| Forward Current Transfer Ratio (hFE), MIN | 8 |
| Ic Max. (A) | 10 |
| Icbo Max. @Vcb Max. (A), Trans. Freq (Hz) Min. | 10m |
| Manufacturer | Shindengen |
| Max. hFE | 12 |
| Max. Operating Junction Temperature (Tj) | 175 ?C |
| Max. PD (W) | 100 |
| Maximum Collector Current |Ic max| | 10 A |
| Maximum Collector Power Dissipation (Pc) | 100 W |
| Maximum Collector-Base Voltage |Vcb| | 500 V |
| Maximum Collector-Emitter Voltage |Vce| | 400 V |
| Maximum Emitter-Base Voltage |Veb| | 4 V |
| Min hFE | 4.0 |
| Oper. Temp (?C) Max. | 140 |
| Pinout Equivalence Number | 3-14 |
| Polarity | NPN |
| R(sat) (?) | 200m |
| SKU | 577133 |
| Surface Mounted Yes/No | NO |
| Tr Max. (s) | 2.0u |
| Transition Frequency (ft): | 5 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 500 |
| Vbr CEO | 400 |