| Alternate Part No. | 844-IRF820 |
| Brand | Vishay / Siliconix |
| Case | TO220 |
| Channel Mode | Enhancement |
| Ciss Max. (F) | 360p- |
| Configuration | Single |
| Derate (Amb) (W/?C) | 400m |
| device function | mosfet |
| device package type | to-220 |
| Fall Time | 16 ns |
| gfs Max. | 2.3- |
| gfs Min | 1.5 |
| I(d) for G(fs) | 1.4 |
| Id - Continuous Drain Current | 2.5 A |
| Id Max. (A) | 2.5# |
| item per pack | 1 |
| Manufacturer | Vishay Semiconductor, Vishay |
| Manufacturer Part No. | IRF820 |
| Max. PD (W) | 50 |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Oper. Temp (?C) Max. | 150# |
| package | 50 PER TUBE |
| Package/Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 50 W |
| Pinout Equivalence Number | 4-109 |
| Product Category | mosfet |
| R(ds) On (?) | 3.0= |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Rise Time | 8.6 ns |
| Series | IRF/SIHF820 |
| SKU | 85286 |
| Surface Mounted Yes/No | NO |
| t(f) Max. (S) | 18n |
| t(stor) Max. (S) | 42n |
| td(on) Max (S) | 15n |
| Tr Max. (s) | 18n |
| Transistor Polarity | N-Channel |
| Type | Transistor N Channel MOSFET |
| Typical Turn-Off Delay Time | 33 ns |
| Vbr DSS | 500 |
| Vbr GSS | 20 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vp Max. | 4.0 |