- mpnSI1902DL-T1-E3
- brandname: Siliconix / Vishay
- manufacturername: Siliconix / Vishay
Siliconix / Vishay SI1902DL-T1-E3 MOSFET, Dual, N-Channel, 20V, 0.70A, SOT-363 (100 pieces)
- PartNumber: SI1902DL-T1-E3
- Size: 100 Piece
- PackageQuantity: 100
- Manufacturer: VISHAY SILICONIX
- Label: VISHAY SILICONIX
Attributes
| Key | Value |
|---|
| Alternate Part No. | 781-SI1902DL-E3 |
| Base Product Number | SI1902 |
| Brand | Vishay / Siliconix |
| Category | Discrete Semiconductor . |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single, 2 N-Channel (Du. |
| Current - Continuous Dr. | 660mA |
| Description | MOSFET 2N-CH 20V 0.66A . |
| Detailed Description | Mosfet Array 20V 660mA . |
| Digi-Key Part Number | SI1902DL-T1-E3TR-ND - T. |
| Dimensions | 2.2 x 1.35 x 1 mm |
| Drain Current | 0.66 A |
| Drain to Source On Resi. | 0.63 Ohms |
| Drain to Source Voltage | 20 V |
| Drain to Source Voltage. | 20V |
| Fall Time | 16 ns |
| FET Feature | Logic Level Gate |
| Forward Transconductance | 1.5 S |
| Forward Voltage, Diode | 1.2 V |
| Gate Charge (Qg) (Max) . | 1.2nC @ 4.5V |
| Gate to Source Voltage | ?12 V |
| Height | 0.039" (1mm) |
| Id - Continuous Drain C. | 700 mA |
| Input Capacitance (Ciss. | - |
| Junction to Ambient The. | 400 ?C/W |
| Length | 0.086 in |
| Manufacturer | Vishay Siliconix, Vishay |
| Manufacturer Part No. | SI1902DL-T1-E3 |
| Manufacturer Product Nu. | SI1902DL-T1-E3 |
| Manufacturer Standard L. | 17 Weeks |
| Maximum Operating Tempe. | +150 ?C, + 150 C |
| Mfr | Vishay Siliconix |
| Minimum Operating Tempe. | - 55 C, -55 ?C |
| Mounting Style | SMD/SMT |
| Mounting Type | Surface Mount |
| Number of Elements per . | 2 |
| Number of Pins | 6 |
| Operating Temperature | -55 to 150 ?C, -55?C ~ . |
| Package | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Type | SC-70 |
| Package/Case | SOT-363-6 |
| Packaging | Reel |
| Part # Aliases | SI1902DL-E3 |
| Pd - Power Dissipation | 270 mW |
| Polarization | N-Channel |
| Power - Max | 270mW |
| Power Dissipation | 0.27 W |
| Product Category | MOSFET |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 660mA, 4.5V |
| Rds On - Drain-Source R. | 385 mOhms |
| Rise Time | 16 ns |
| Series | TrenchFET?, SI19 Series. |
| Supplier Device Package | SC-70-6 |
| Technology | MOSFET (Metal Oxide) |
| Temperature Operating R. | -55 to +150 ?C |
| Total Gate Charge | 0.8 nC |
| Tradename | TrenchFET |
| Transistor Polarity | N-Channel |
| Turn Off Delay Time | 10 ns |
| Turn On Delay Time | 10 ns |
| Typical Gate Charge @ V. | 0.8 nC @ 10 V |
| Typical Turn-Off Delay . | 10 ns |
| Vds - Drain-Source Brea. | 20 V |
| Vgs - Gate-Source Break. | 12 V |
| Vgs(th) (Max) @ Id | 1.5V @ 250?A |
| Voltage, Breakdown, Dra. | 20 V |
| Width | 0.053 in |
All Prices
| Img | Seller | Supplier SKU | Min Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
|---|
| us.rs-online.com | 70026095 | 0.17021 | 3000 | 10 | | Siliconix / Vishay | | 0.17021 @ 3000 |
 | Newark | 06J7550 | 0.542 | 1 | 5750 | | VISHAY | | 0.542 @ 10 |
 | Digi-Key | 1656324 | 0.5436 | 1 | 691 | | Vishay Siliconix | | 0.5436 @ 10 |
 | swatee.com | SI1902DL-T1-E3 | 0.83 | 1 | 4750 | | Vishay | | 0.83 @ 10 |
 | Component Electronics | 1902DL-T1-E3-VIS | 2.31 | 1 | 720 | | Vishay | | 2.31 @ 10 |