brand:
manufacturer:
Description:
N-CHANNEL 20-V (D-S) MOSFET
Preferred Price:
1.52
Price:
1.52
Min Simple Price:
0.1452
Absolute Min Price:
1.55
Min Price:
1.55
Dimensions:
[1.0, 1.0, 1.0]
qty:
345
simpleSku:
DUyMzU:::SI2312BDS-T1-E3/BKN
sku:
DUyMzU::KU:SI2312BDS-T1-E3/BKN@y0
condition:
11
seller:
Hotenda
amzMan:
vishay
HazMat:
False
DropShip:
False
Attributes
| Key ^ | Value |
|---|---|
| Base Product Number | SI2312 |
| Category | Discrete Semiconductor Products |
| Channel Type | N |
| Configuration | Single |
| Current - Continuous Drain (Id) @ 25?C | 3.9A (Ta) |
| Description | MOSFET N-CH 20V 3.9A SOT23-3 |
| Detailed Description | N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) |
| Digi-Key Part Number | SI2312BDS-T1-E3TR-ND - Tape & Reel (TR) |
| Dimensions | 3.04 x 1.4 x 1.02 mm |
| Drain Current | 5 A |
| Drain to Source On Resistance | 0.047 Ohms |
| Drain to Source Voltage, Drain to Source Voltage (Vdss), Voltage, Breakdown, Drain to Source | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Fall Time, Turn On Delay Time | 15 ns |
| FET Feature | - |
| FET Type, Polarization | N-Channel |
| Forward Transconductance | 30 S |
| Forward Voltage, Diode | 1.2 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Gate to Source Voltage | ?8 V |
| Height | 0.04" (1.02mm) |
| Junction to Ambient Thermal Resistance | 100 ?C/W |
| Length | 0.119 in |
| Manufacturer Product Number | SI2312BDS-T1-E3 |
| Manufacturer Standard Lead Time | 17 Weeks |
| Manufacturer, Mfr | Vishay Siliconix |
| Maximum Operating Temperature | +150 ?C |
| Minimum Operating Temperature | -55 ?C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating and Storage Temperature | -55 to +150 C |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Package Type | TO-236 |
| Power Dissipation | 1.25 W |
| Power Dissipation (Max) | 750mW (Ta) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 4.5V |
| Series | TrenchFET?, SI23 Series |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Technology | MOSFET (Metal Oxide) |
| Temperature Operating Range | -55 to +150 ?C |
| Total Gate Charge | 12 nC |
| Turn Off Delay Time | 55 ns |
| Typical Gate Charge @ Vgs | 7.5 nC @ 10 V |
| Vgs (Max) | ?8V |
| Vgs(th) (Max) @ Id | 850mV @ 250?A |
| Width | 0.055 in |
All Prices
| Img | Seller | Supplier SKU | Requested Price ^ | Calc MOQ Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
|---|---|---|---|---|---|---|---|---|---|---|
| Hotenda | H1806582 | 0.1452 | 8.77008 | 1 | 54000 | Vishay/Siliconix | 0.1452 @ Qty: 100+ | |||
| us.rs-online.com | 70026195 | 0.2894 | 364.644 | 3000 | 100 | Siliconix / Vishay | 0.2894 @ Qty: 3000+ | |||
 | Newark | 51K6950 | 0.291 | 17.5764 | 1 | 13215 | VISHAY | 0.291 @ Qty: 100+ | ||
 | Digi-Key | 1656344 | 0.44268 | 26.737872 | 1 | 100 | Vishay Siliconix | 0.44268 @ Qty: 100+ | ||
| Win Source | SI2312BDS-T1-E3 | 0.85 | 64.6 | 40 | 66070 | Vishay | 0.85 @ Qty: 100+ | |||
 | Component Electronics | SI2312BDS-T1-E3-VIS | 1.15 | 69.46 | 1 | 718 | Vishay | 1.15 @ Qty: 100+ |
