Alternate Part No. | 781-SUM110N063M9HE3 |
Application | Automotive such as high-side switch, motor drives, 12 V battery |
Brand | Vishay / Siliconix |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Dimensions | 10.414 x 9.652 x 4.826 mm |
Drain Current, Id - Continuous Drain Current | 110 A |
Drain to Source On Resistance | 0.0082 Ohms |
Drain to Source Voltage, Vds - Drain-Source Breakdown Voltage, Voltage, Breakdown, Drain to Source | 60 V |
Fall Time | 14 ns |
Forward Transconductance | 30 S |
Forward Voltage, Diode | 1.1 V |
Junction to Ambient Thermal Resistance | 40 ?C?W |
Length | 0.41 in |
Manufacturer | Vishay |
Manufacturer Part No. | SUM110N06-3M9H-E3 |
Maximum Operating Temperature | + 175 C, +175 ?C |
Minimum Operating Temperature | - 55 C, -55 ?C |
Mounting Style | SMD/SMT |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Operating and Storage Temperature | -55 to +175 C |
Package Type | TO-263 |
Package/Case | D2PAK-2 |
Packaging | Reel |
Pd - Power Dissipation | 3.75 W |
Polarization, Transistor Polarity | N-Channel |
Power Dissipation | 375 W |
Product Category | MOSFET |
Product Header | TrenchFET? Power MOSFET |
Rds On - Drain-Source Resistance | 3.9 mOhms |
Resistance, Thermal, Junction to Case | 0.4 ?C/W |
Rise Time | 160 ns |
Series | SUM, SUM Series |
Total Gate Charge | 200 nC |
Turn Off Delay Time, Typical Turn-Off Delay Time | 75 ns |
Turn On Delay Time | 45 ns |
Typical Gate Charge @ Vgs | 200 nC @ 10 V |
Vgs - Gate-Source Breakdown Voltage | 20 V |