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Siliconix / Vishay SUM110N06-3M9H-E3
manufacturer:

Attributes

Key ^Value
ApplicationAutomotive such as high-side switch, motor drives, 12 V battery
Channel TypeN
ConfigurationSingle
Dimensions10.414 x 9.652 x 4.826 mm
Drain Current110 A
Drain to Source On Resistance0.0082 Ohms
Drain to Source Voltage, Voltage, Breakdown, Drain to Source60 V
Fall Time14 nS
Forward Transconductance30 S
Forward Voltage, Diode1.1 V
Junction to Ambient Thermal Resistance40 ?C?W
Length0.41 in
Maximum Operating Temperature+175 ?C
Minimum Operating Temperature-55 ?C
Mounting TypeSurface Mount
Number of Elements per Chip1
Number of Pins3
Operating and Storage Temperature-55 to +175 C
Package TypeTO-263
PolarizationN-Channel
Power Dissipation375 W
Product HeaderTrenchFET? Power MOSFET
Resistance, Thermal, Junction to Case0.4 ?C/W
SeriesSUM Series
Total Gate Charge200 nC
Turn Off Delay Time75 ns
Turn On Delay Time45 ns
Typical Gate Charge @ Vgs200 nC @ 10 V