Attributes

Key Value
@Ic (A)10m
@VCE (test) (V)10
C(ob) (F)3p
CaseTO39
Collector Capacitance (.4 pF
Derate (Amb) (W/?C)4.5m
Forward Current Transfe.15
hfe15
Icbo Max. @Vcb Max. (A)1.0u
ManufacturerST Microelectronics - S.
Max. Operating Junction.175 ?C
Max. PD (W)800m
Maximum Collector Curre.0.005 A
Maximum Collector Power.0.8 W
Maximum Collector-Base .135 V
Maximum Collector-Emitt.135 V
Maximum Emitter-Base Vo.4 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityNPN
SKU85453
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.40M
Transition Frequency (f.40 MHz
TypeTransistor Silicon NPN
Vbr CBO135
Vbr CEO135
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