Attributes

Key Value
@Ic (A)10m
@VCE (test) (V)10
C(ob) (F)6.0p
CaseTO39
Collector Capacitance (.12 pF
Derate (Amb) (W/?C)4.5m
Forward Current Transfe.30
hfe60
Icbo Max. @Vcb Max. (A).10u
ManufacturerST Microelectronics - S.
Max. Operating Junction.200 ?C
Max. PD (W)800m
Maximum Collector Curre.0.001 A
Maximum Collector Power.0.8 W
Maximum Collector-Base .155 V
Maximum Collector-Emitt.15 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.N/A
PolarityNPN
SKU85926
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.60.M
Transition Frequency (f.30 MHz
TypeTransistor Silicon NPN
Vbr CBO150
Vbr CEO150
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