| @Ic (test) (A) | 4.5 |
| @VCE (V), Ic Max. (A) | 5.0 |
| Case | TO3 |
| Collector Capacitance (Cc) | 125 pF |
| Derate Above 25?C | 625m |
| Forward Current Transfer Ratio (hFE), MIN | 2 |
| Icbo Max. @Vcb Max. (A) | 1.0m |
| Manufacturer | ST Microelectronics - STM |
| Max. Operating Junction Temperature (Tj) | 115 ?C |
| Max. PD (W) | 13 |
| Maximum Collector Current |Ic max| | 8 A |
| Maximum Collector Power Dissipation (Pc) | 12.5 W |
| Maximum Collector-Base Voltage |Vcb| | 1500 V |
| Maximum Collector-Emitter Voltage |Vce| | 700 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Min hFE | 2.3 |
| Oper. Temp (?C) Max. | 115 |
| Pinout Equivalence Number | 3-14 |
| Polarity | NPN |
| R(sat) (?) | 222m |
| SKU | 20613 |
| Surface Mounted Yes/No | NO |
| t(f) Max. (S) | 400n |
| Tr Max. (s) | 700n |
| Trans. Freq (Hz) Min. | 4.0M |
| Transition Frequency (ft): | 4 MHz |
| Type | Transistor Silicon NPN |
| Vbr CEO | 700 |