Attributes

Key Value
Base Product NumberSCTWA35
CategoryDiscrete Semiconductor .
Current - Continuous Dr.45A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .18V, 20V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .73 nC @ 20 V
Input Capacitance (Ciss.1370 pF @ 400 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-247-3
Part StatusActive
Power Dissipation (Max)208W (Tc)
Rds On (Max) @ Id, Vgs72mOhm @ 20A, 20V
Series-
Supplier Device PackageTO-247 Long Leads
TechnologySiC (Silicon Carbide Ju.
Vgs (Max)+20V, -5V
Vgs(th) (Max) @ Id3.2V @ 1mA
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