Attributes

Key Value
Base Product NumberSTB5N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.4A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .28 nC @ 10 V
Input Capacitance (Ciss.535 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)70W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
SeriesSuperMESH?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 50?A
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