STMicroelectronics STD4N90K5

B076FBPK5X

ST MICROELECTRONICS STD4N90K5 N-Channel 900 V 2.1 Ohm 5.3 nC MDmesh K5 Power Mosfet - TO-252 - 10 item(s)

ST MICROELECTRONICS STD4N90K5 N-Channel 900 V 2.1 Ohm 5.3 nC MDmesh K5 Power Mosfet - TO-252 - 10 item(s)zoom

Attributes

Key Value
Base Product NumberSTD4N90
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3A (Tc)
Drain to Source Voltage.900 V
Drive Voltage (Max Rds .10V
ECCN EUEAR99
ECCN USParameter Value
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .5.3 nC @ 10 V
GradeEcopack2
Input Capacitance (Ciss.173 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Package NameIndustrial
Packing TypeNEC
Power Dissipation (Max)60W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs2.1Ohm @ 1A, 10V
RoHs compliantTape And Reel
SeriesMDmesh?
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 100?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics70827320.74425002500STMicroelectronics0.744 @ 2500
Digi-Key66160421.25660512500STMicroelectronics1.256605 @ 2500
thumbzoomst.comSTD4N90K51.4412500STMicroelectronics1.44 @ 2500
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