Alternate Part No. | 511-STD4NK80Z-1 |
Base Product Number | STD4NK80 |
Brand, Manufacturer, Mfr | STMicroelectronics |
Category | Discrete Semiconductor Products |
Channel Mode | Enhancement |
Configuration | Single |
Current - Continuous Drain (Id) @ 25?C | 3A (Tc) |
Drain to Source Voltage (Vdss), Vds - Drain-Source Breakdown Voltage | 800 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN EU | EAR99 |
ECCN US | IPAK |
Fall Time | 32 ns |
FET Feature | - |
FET Type, Transistor Polarity | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
Grade | Ecopack2 |
Id - Continuous Drain Current | 3 A |
Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V |
Manufacturer Part No. | STD4NK80Z-1 |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style, Mounting Type | Through Hole |
Operating Temperature | -55?C ~ 150?C (TJ) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Package Name | Industrial |
Package, Packaging, RoHs compliant | Tube |
Package/Case | IPAK-3 |
Packing Type | NEC |
Part Status | Active |
Pd - Power Dissipation | 80 W |
Power Dissipation (Max) | 80W (Tc) |
Product Category | MOSFET |
Qg - Gate Charge | 22.5 nC |
Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1.5A, 10V |
Rds On - Drain-Source Resistance | 3.5 Ohms |
Rise Time | 12 ns |
Series | SuperMESH?, STD4NK80Z |
Supplier Device Package | TO-251 (IPAK) |
Technology | MOSFET (Metal Oxide) |
Typical Turn-Off Delay Time | 35 ns |
Vgs (Max) | ?30V |
Vgs - Gate-Source Breakdown Voltage | 30 V |
Vgs(th) (Max) @ Id | 4.5V @ 50?A |