STMicroelectronics STD60N55F3

B077BCKF6S

ST Microelectronics STD60N55F3 N-Channel 55 V 8.5 mOhm Surface Mount STripFET III Power MosFet - TO-252-10 Item(s)

ST Microelectronics STD60N55F3 N-Channel 55 V 8.5 mOhm Surface Mount STripFET III Power MosFet - TO-252-10 Item(s)zoom

Attributes

Key Value
Base Product NumberSTD60N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.80A (Tc)
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .45 nC @ 10 V
Input Capacitance (Ciss.2200 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)110W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs8.5mOhm @ 32A, 10V
SeriesSTripFET? III
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics70452890.6325002500STMicroelectronics0.63 @ 2500
HotendaH18178250.893712500STMicroelectronics0.8937 @ 25
AmazonTPB07N6LG54T70.41252STMicroelectronics70.4 @ 25
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