Attributes

Key Value
Base Product NumberSTF12
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10.5A (Tc)
Drain to Source Voltage.800V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .87nC @ 10V
Input Capacitance (Ciss.2620pF @ 25V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusActive
Power Dissipation (Max)40W (Tc)
Rds On (Max) @ Id, Vgs750mOhm @ 5.25A, 10V
SeriesSuperMESH?
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 100?A
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