Attributes

Key Value
Base Product NumberSTH10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Tc)
Drain to Source Voltage.800 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .17.3 nC @ 10 V
Input Capacitance (Ciss.426 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)121W (Tc)
Rds On (Max) @ Id, Vgs680mOhm @ 4A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageH2Pak-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 100?A
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