Attributes

Key Value
Categories Discrete Semiconductor.
Current - Continuous Dr. 10A (Tc)
Drain to Source Voltage. 600V
Drive Voltage (Max Rds . 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) . 19nC @ 10V
Input Capacitance (Ciss. 540pF @ 50V
Lead Free Status / RoHS. Lead free / RoHS Compl.
Manufacturer STMicroelectronics
Manufacturer Part Number STI10NM60N
Moisture Sensitivity Le. 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55?C ~ 150?C (TJ)
Package / Case TO-262-3 Long Leads, I.
Packaging Tube
Power Dissipation (Max) 70W (Tc)
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V
Series MDmesh? II
Standard Package 50
Supplier Device Package I2PAK (TO-262)
Technology MOSFET (Metal Oxide)
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