Attributes

Key Value
Base Product NumberSTI10N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Tc)
DescriptionMOSFET N-CH 600V 10A I2.
Detailed DescriptionN-Channel 600 V 10A (Tc.
Digi-Key Part Number497-13839-5-ND
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .19 nC @ 10 V
Input Capacitance (Ciss.540 pF @ 50 V
ManufacturerSTMicroelectronics
Manufacturer Product Nu.STI10NM60N
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I?.
Power Dissipation (Max)70W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs550mOhm @ 4A, 10V
SeriesMDmesh? II
Supplier Device PackageI2PAK (TO-262)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id4V @ 250?A
prev