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STMicroelectronics STP26N65DM2
manufacturer:
Description:
N-Channel 650 V 20A (Tc) 170W (Tc) Through Hole TO-220

Attributes

Key ^Value
Base Product NumberSTP26
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C20A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)170W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
SeriesMDmesh? DM2
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id5V @ 250?A