Attributes

Key Value
Base Product NumberSTP6N95
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9A (Tc)
Drain to Source Voltage.950 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .13 nC @ 10 V
Input Capacitance (Ciss.450 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)90W (Tc)
Rds On (Max) @ Id, Vgs1.25Ohm @ 3A, 10V
SeriesSuperMESH5?
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 100?A
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