Attributes

Key Value
Base Product NumberSTU75N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.75A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .17 nC @ 4.5 V
Input Capacitance (Ciss.1690 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, I.
Part StatusObsolete
Power Dissipation (Max)60W (Tc)
Rds On (Max) @ Id, Vgs5.9mOhm @ 37.5A, 10V
SeriesDeepGATE?, STripFET? VI
Supplier Device PackageTO-251 (IPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
prev