Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.93 nC @ 10 V
Drive Voltage (Max Rds .62mOhm @ 24.5A, 10V
FET Feature358W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .3900 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeTO-247
Operating TemperatureThrough Hole
PackageActive
Package / Case650 V
Part StatusN-Channel
Power Dissipation (Max)150?C (TJ)
Rds On (Max) @ Id, Vgs4V @ 250?A
SeriesTube
Supplier Device PackageTO-247-3
Technology49A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?25V
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