STMicroelectronics STW56N65M2

mpnSTW56N65M2
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Current - Continuous Dr.	49A (Tc)
Drain to Source Voltage.	650V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	93nC @ 10V
Input Capacitance (Ciss.	3900pF @ 100V
Lead Free Status / RoHS.	RoHS Compliant
Manufacturer Part Number	STW56N65M2
Manufacturer Standard L.	30 Weeks
Mounting Type	Through Hole
Operating Temperature	150
Package / Case	TO-247-3
Packaging	Tube
Power Dissipation (Max)	358W (Tc)
Rds On (Max) @ Id, Vgs	62mOhm @ 24.5A, 10V
Series	MDmesh
Standard Package	30
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 250