Attributes

Key Value
Base Product NumberSTWA50
CategoryDiscrete Semiconductor .
Current - Continuous Dr.38A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .69 nC @ 10 V
Input Capacitance (Ciss.3200 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)300W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs87mOhm @ 19A, 10V
SeriesAutomotive, AEC-Q101, M.
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id5V @ 250?A
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