B083TLMFWD

TSM2NB60CP ROG, Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R (250 Items)

Attributes

Key Value
CaseDPAK
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2A (Tc)
Drain current1.35A
Drain to Source Voltage.600 V
Drain-source voltage600V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate charge9.4nC
Gate Charge (Qg) (Max) .9.4 nC @ 10 V
Gate-source voltage?30V
Input Capacitance (Ciss.249 pF @ 25 V
Kind of channelenhanced
ManufacturerTAIWAN SEMICONDUCTOR
MfrTaiwan Semiconductor Co.
MountingSMD
Mounting TypeSurface Mount
On-state resistance4.4?
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Polarisationunipolar
Power dissipation44W
Power Dissipation (Max)44W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs4.4Ohm @ 1A, 10V
Series-
Supplier Device PackageTO-252, (D-Pak)
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Digi-Key73603060.249755000250Taiwan Semiconductor Corporation0.24975 @ 5000
VericalTSM2NB60CP ROG0.348225005000Taiwan Semiconductor0.3482 @ 2500
Chip One Stop GlobalC1S7547001255510.40925005000Taiwan Semiconductor0.409 @ 2500
TMETSM2NB60CP-ROG0.63311250TAIWAN SEMICONDUCTOR0.6331 @ 250
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