Attributes

Key Value
Base Product NumberTSM015
CategoryDiscrete Semiconductor .
Current - Continuous Dr.205A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .67 nC @ 10 V
Input Capacitance (Ciss.4243 pF @ 15 V
MfrTaiwan Semiconductor Co.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power Dissipation (Max)104W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.5mOhm @ 32A, 10V
Series-
Supplier Device Package8-PDFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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