Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.220mA (Ta)
Drain to Source Voltage.60V
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) .0.91nC @ 4.5V
Input Capacitance (Ciss.30pF @ 30V
MfrTaiwan Semiconductor Co.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
Package / Case6-TSSOP, SC-88, SOT-363
Part StatusActive
Power - Max240mW (Ta)
Rds On (Max) @ Id, Vgs2.5Ohm @ 220mA, 10V
Series-
Supplier Device PackageSOT-363
Vgs(th) (Max) @ Id2.5V @ 250?A
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