| @Ic (A) | 2.0m |
| @VCE (test) (V) | 6.0 |
| C(ob) (F) | 4.0p |
| Case | TO92 |
| Collector Capacitance (Cc) | 4 pF |
| Forward Current Transfer Ratio (hFE), MIN | 200 |
| hfe | 400= |
| Ic Max. (A), Trans. Freq (Hz) Min. | 100m |
| Manufacturer | Toshiba |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Max. PD (W) | 300m |
| Maximum Collector Current |Ic max| | 0.1 A |
| Maximum Collector Power Dissipation (Pc) | 0.3 W |
| Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce| | 120 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Pinout Equivalence Number | 3-12 |
| Polarity | PNP |
| SKU | 394813 |
| Surface Mounted Yes/No | NO |
| Transition Frequency (ft): | 100 MHz |
| Type | Transistor Silicon PNP |
| Vbr CBO, Vbr CEO | 120 |